Methods
1. High Speed Laserflash Method (Rear heating Front detection (RF)):
As thermal properties of thin layers and films differ considerably from the properties of the corresponding bulk material a technique overcoming the limitations of the classical Laserflash method is required: the “High Speed Laserflash Method”.
The measurement geometry is the same as for the standard Laserflash technique: detector and laser are on opposide sides of the samples. Because IR-detectors are to slow for measurement of thin layers, detection is done by the so called thermoreflectance method. The idea behind this technique is that once a material is heated up, the change in the reflectance of the surface can be utilized to derive the thermal properties. The reflectivity is measured with respect to time, and the data received can be matched to a model which contains coefficients that correspond to thermal properties.
2. Time Domain Thermoreflectance Method (Front heating Front detection (FF)):
The Time-Domain Thermoreflectance technique is a method by which the thermal properties (thermal conductivity, thermal diffusivity) of thin layers or films. The measurement geometry is called “front heating front detection (FF)” because detector and laser are on the same side of the sample. This method can be applied to thin layers on non-transparent substrates for which the RF technique is not suitable.
3. Combined High Speed Laserflash (RF) and Time Domain Thermoreflectance Method (FF):
Of curse both methods can also be implemented in a single system to combine the advantages of both.
Specifications
MODELL |
TF-LFA* |
Temperature range: |
RT
RT up to 500°C
-100°C up to 500°C |
Heating and cooling rates: |
0,01 up to 10 K/min |
Pump-Laser: |
Nd:YAG Laser |
Maximum Impulse current: |
90mJ/Impuls (software controlled) |
Pulsewidth: |
5 ns (optional 1 ns) |
Probe-Laser: |
CW DPSS-Laser (473 nm), max. 50 mW |
Photoreceiver: |
Si-PIN-Photodiode, active diameter: 0.8 mm, bandwidth DC … 400MHz, risetime: 1ns |
Thermal diffusivity measuring range: |
0,01 mm2/s to 1000 mm2/s |
Sample diameter: |
round samples ∅ 10…20 mm |
Sample thickness: |
80 nm up to 20 µm |
Atmospheres: |
inert, oxidizing, reducing |
Vacuum: |
up to 10E-4mbar |
Electronics: |
Integrated |
Interface: |
USB |
*Specs depend on configurations