NPE-4000 - PECVD System

ANO-MASTER's PECVD systems are capable of depositing high quality SiO2, Si3N4, CNT, DLC or SiC films. Depending on application, RF showerhead, Hollow Cathode, ICP or Microwave plasma sources can be used. The platen can accomodate up to 8" wafers and can be biased with RF, Pulsed DC or DC while being heated up to 800°C resistively or with IR lamps. The chamber is evacuated to 5x10-7 Torr pressure range using 250 l/sec turbo molecular pump backed with 5 cfm mechanical pump. The system utilizes LabVIEW PC control for full automation.